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DMN3731UFB4-7B

Part No DMN3731UFB4-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.2A 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 39 Weeks
Features N-Channel 30 V 1.2A (Ta) 520mW (Ta) Surface Mount X2-DFN1006-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 3-XFDFN
Case / Package X2-DFN1006-3
Family Name DMN3731
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 10000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 917155-DMN3731UFB4-7B
Ultra Librarian 3D Model Ultra Librarian DMN3731UFB4-7B CAD Model

Description

Introducing the DMN3731UFB4-7B MOSFET from Diodes Incorporated

The DMN3731UFB4-7B is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is specifically engineered to deliver efficient power management and signal amplification in a variety of electronic applications.

Key Features

  • Low On-Resistance: The DMN3731UFB4-7B boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal power loss and heat generation during operation.
  • Power Dissipation: It is capable of handling a substantial amount of power with a total power dissipation (P<sub>D) that ensures reliable performance under varying conditions.
  • Compact Footprint: Housed in a small form factor package, the DMN3731UFB4-7B allows for high-density board layouts, making it perfect for space-constrained applications.
  • Lead-Free and RoHS Compliant: This MOSFET is designed with environmental considerations in mind, complying with RoHS standards which restrict the use of certain hazardous substances in electrical and electronic equipment.

Applications

The DMN3731UFB4-7B is suitable for a broad range of applications, including but not limited to:

  • Power Management Systems
  • DC/DC Converters
  • Load Switches
  • Battery Management Circuits
  • Motor Control Modules

With its robust performance characteristics, the DMN3731UFB4-7B is a versatile component that enhances the efficiency and reliability of electronic systems. Diodes Incorporated's commitment to quality ensures that the DMN3731UFB4-7B meets the stringent requirements of the modern electronics industry, making it a smart choice for designers and engineers looking to optimize their power management solutions.

For detailed specifications, application notes, and additional resources, please refer to the official product datasheet and support documentation provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,385+ $0.0362 $50.1370
2,945+ $0.0340 $100.1300
4,575+ $0.0328 $150.0600
6,560+ $0.0305 $200.0800
8,505+ $0.0294 $250.0470
10,640+ $0.0282 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 250,000 pieces
MOQ: 1385 pcs
Order Increment : 1 pcs
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