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DMN5010VAK-7

Part No DMN5010VAK-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 0.28A SOT-563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 280mA
Maximum Rds On at Id,Vgs 2 Ohm @ 50mA, 5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 014446-DMN5010VAK-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN5010VAK-7 CAD Model

Description

Overview of Diodes Incorporated DMN5010VAK-7

The DMN5010VAK-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) from Diodes Incorporated, designed specifically for power management applications. This MOSFET utilizes advanced trench technology to provide excellent RDS(on) and low gate charge, making it a highly efficient component for a wide range of electronic devices.

Key Features

  • Low On-Resistance: The DMN5010VAK-7 boasts an extremely low on-resistance (RDS(on)), which translates to reduced losses and improved efficiency in electronic circuits.
  • High Continuous Drain Current: With the capability to support a high continuous drain current (ID), this MOSFET can handle significant power, making it suitable for demanding applications.
  • Low Gate Threshold Voltage: The low gate threshold voltage (VGS(th)) ensures that the device can be easily turned on with low voltage drives, which is beneficial for battery-operated devices.
  • Fast Switching Speed: The fast switching characteristics of the DMN5010VAK-7 make it an ideal choice for high-frequency power switching applications.
  • High Power Dissipation: Its high power dissipation capability allows the MOSFET to withstand and dissipate heat efficiently, ensuring reliability even under stressful conditions.

Applications

The DMN5010VAK-7 is versatile and can be used in a variety of applications, including:

  • Power supply converters
  • Motor drives
  • Battery management systems
  • DC-DC converters
  • Load switches
  • Power management for portable devices

Package and Quality

Encased in a compact SOT-23 package, the DMN5010VAK-7 is designed for space-constrained applications. The small footprint does not compromise its performance or reliability, making it an excellent choice for portable and high-density circuit designs. Furthermore, Diodes Incorporated is committed to high-quality standards, ensuring that each component, including the DMN5010VAK-7, meets rigorous industry specifications for performance and reliability.

In conclusion, the DMN5010VAK-7 from Diodes Incorporated is a powerful, efficient, and reliable solution for modern electronic applications requiring high-performance power switching capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
415+ $0.1395 $57.8925
1,010+ $0.1146 $115.7460
1,565+ $0.1110 $173.7150
2,155+ $0.1074 $231.4470
2,785+ $0.1039 $289.3615
3,725+ $0.0931 $346.7975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,085 pieces
MOQ: 415 pcs
Order Increment : 1 pcs
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