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DMN5L06DWK-7

Part No DMN5L06DWK-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 0.305A SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 305mA
Maximum Rds On at Id,Vgs 2 Ohm @ 50mA, 5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Power Dissipation 250mW
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 014449-DMN5L06DWK-7
Family Name DMN5L06DWK
Introduction Date July 19, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DMN5L06DWK-7 CAD Model

Description

Product Overview: DMN5L06DWK-7

The DMN5L06DWK-7 is a high-performance, dual N-channel enhancement mode field-effect transistor (FET) produced by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products. This product is designed to deliver efficient power control and is suitable for a wide range of applications, including power management, load switching, and battery protection circuits.

Key Features

  • Low On-Resistance: The DMN5L06DWK-7 features very low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring that devices can switch on and off rapidly without performance degradation.
  • Dual N-Channel Configuration: The dual N-channel setup allows for compact circuit designs by integrating two transistors in a single package, saving space on the PCB.
  • Low Threshold Voltage: A low gate threshold voltage ensures that the DMN5L06DWK-7 can be driven by low-voltage logic signals, making it compatible with modern microcontrollers and logic devices.
  • Lead-Free and RoHS Compliant: In keeping with environmental standards, this product is lead-free and RoHS compliant, making it a responsible choice for electronic designs.

Applications

  • Power Management Systems
  • Load Switching
  • Battery Protection
  • DC/DC Converters
  • Motor Drives
  • Computing Devices

The DMN5L06DWK-7 comes in a small SOT-363 package, which is ideal for space-constrained applications. Its compact form factor, combined with its high efficiency and reliability, makes it an excellent choice for portable electronics, where space and power conservation are critical. Diodes Incorporated's commitment to quality ensures that this MOSFET meets the stringent requirements of the industry, providing a robust and durable solution for electronic circuit designs.

With its technical sophistication and versatility, the DMN5L06DWK-7 stands out as a superior choice for designers looking to optimize their power management systems and achieve high performance in a variety of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1171 $50.3530
915+ $0.1097 $100.3755
1,420+ $0.1060 $150.5200
2,030+ $0.0986 $200.1580
2,635+ $0.0949 $250.0615
3,290+ $0.0912 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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