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Same model may have multiple batches, images only for reference.
SIDR870ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIDR870ADP-T1-GE3

Part No SIDR870ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIDR870ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2866 pF @ 50 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Product Number SIDR870
Other Names SIDR870ADP-T1-GE3CT,SIDR870ADP-T1-GE3TR,SIDR870ADP-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277588-SIDR870ADP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIDR870ADP-T1-GE3 CAD Model

Description

This electronic component is a MOSFET transistor belonging to the N-channel TrenchFET series.

  • Win Source Part Number: 1277588-SIDR870ADP-T1-GE3
  • Drain to source voltage: 100 V
  • Continuous drain current: 95A (Tc)
  • Maximum Rds On: 6.6mOhm @ 20A, 10V
  • Gate charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Power dissipation: 125W (Tc)
  • Package/case: PowerPAK SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0223 $50.5575
61+ $1.6593 $101.2173
94+ $1.6075 $151.1050
129+ $1.5556 $200.6724
167+ $1.5038 $251.1346
223+ $1.3482 $300.6486
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