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DMN6068SE-13

Part No DMN6068SE-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 4.1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10.3nC @ 10V
Max Input Capacitance 502pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 68 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 084065-DMN6068SE-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN6068SE-13 CAD Model

Description

DMN6068SE-13 N-Channel Enhancement Mode Field Effect Transistor

The DMN6068SE-13 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed and manufactured by the esteemed semiconductor company, Diodes Incorporated. This MOSFET is a pivotal component in a wide range of electronic applications due to its efficiency and reliability. It is particularly well-suited for power management tasks within both commercial and industrial equipment.

Constructed with advanced trench technology, the DMN6068SE-13 boasts a low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances overall device performance. This feature is particularly beneficial in applications where high efficiency is paramount, such as in DC-DC converters, power supplies, and motor control circuits.

The transistor operates at a continuous drain current of 60A, making it capable of handling high current loads without compromise. Its maximum drain-source voltage is rated at 68V, which provides a comfortable margin for a variety of electronic designs, ensuring a robust and durable operation even under stressful conditions.

One of the key attributes of the DMN6068SE-13 is its low threshold voltage, which allows for a low gate drive requirement. This characteristic is crucial for battery-operated devices where power conservation is critical. Additionally, the product features fast switching speeds, which contribute to reduced switching losses and improved performance in high-frequency applications.

The DMN6068SE-13 comes in a surface-mount package, specifically the SO-8 package, which is known for its compact footprint and ease of integration into PCB designs. This packaging is ideal for space-constrained applications while still providing excellent thermal performance and mechanical robustness.

Diodes Incorporated ensures that the DMN6068SE-13 meets the high-quality standards expected by the industry. The device is RoHS compliant, reflecting the company's commitment to environmental responsibility. With its combination of efficiency, power handling, and compact design, the DMN6068SE-13 is an excellent choice for designers looking to optimize their power management systems.

For detailed technical specifications, application notes, and support documentation, interested parties are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1439 $50.3650
745+ $0.1348 $100.4260
1,155+ $0.1303 $150.4965
1,655+ $0.1212 $200.5860
2,145+ $0.1166 $250.1070
2,680+ $0.1121 $300.4280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,130 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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