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DMN65D8LW-7

Part No DMN65D8LW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.3A SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 0.87nC @ 10V
Max Input Capacitance 22pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300mW (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 115mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 098967-DMN65D8LW-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN65D8LW-7 CAD Model

Description

Introducing the DMN65D8LW-7 MOSFET from Diodes Incorporated

The DMN65D8LW-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and signal amplification across a wide range of applications. Its compact form factor and robust design make it an ideal choice for space-constrained and power-sensitive applications.

Key Features

  • Low On-Resistance: The DMN65D8LW-7 offers a low on-resistance (R<sub>DS(on)), which results in reduced conduction losses and improved power efficiency.
  • High-Speed Switching: This MOSFET is capable of high-speed switching operations, making it suitable for high-frequency power switching applications.
  • Low Threshold Voltage: With a low gate threshold voltage (V<sub>GS(th)), this device can be driven at lower voltages, thus reducing the overall power consumption.
  • Advanced Packaging: Housed in a small surface-mount package (SOT-23), the DMN65D8LW-7 is optimized for PCB space saving and is easy to integrate into various circuit designs.

Applications

The versatility of the DMN65D8LW-7 MOSFET makes it suitable for a wide array of applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Battery Powered Devices
  • Motor Control Circuits
  • Load/Power Switching
  • Portable Electronic Devices

Reliability and Performance

Diodes Incorporated ensures that the DMN65D8LW-7 meets the highest standards of quality and performance. The device's reliability is backed by rigorous testing and validation processes, ensuring that it performs to specifications under varying conditions. With its excellent thermal performance, the DMN65D8LW-7 is also designed to handle continuous high-temperature operation, making it a reliable choice for demanding environments.

Conclusion

Whether you are designing a power supply, managing battery operations, or developing a high-speed switching application, the DMN65D8LW-7 from Diodes Incorporated provides a compact, efficient, and reliable solution. With its advanced features and proven performance, this MOSFET stands out as a top choice for engineers and designers looking to enhance their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,145+ $0.0437 $50.0365
2,790+ $0.0359 $100.1610
4,315+ $0.0348 $150.1620
5,955+ $0.0336 $200.0880
7,695+ $0.0325 $250.0875
10,275+ $0.0292 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200,000 pieces
MOQ: 1145 pcs
Order Increment : 1 pcs
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