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DMS3014SSS-13

Part No DMS3014SSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.4A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Reel
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 45.7nC @ 10V
Max Input Capacitance 2296pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 1.55W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 10.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 014508-DMS3014SSS-13
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian DMS3014SSS-13 CAD Model

Description

Introducing the DMS3014SSS-13 MOSFET from Diodes Incorporated

Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets, presents the DMS3014SSS-13, a state-of-the-art MOSFET designed to deliver both high efficiency and reliability for a wide array of applications.

Key Features

  • Device Type: P-Channel
  • Drain-Source Voltage (V<sub>DS): -30V
  • Continuous Drain Current (I<sub>D): -8.6A
  • R<sub>DS(on): 13.5mΩ at V<sub>GS = -10V
  • Configuration: Single
  • Power Dissipation (P<sub>D): 2.5W
  • Operating Temperature Range: -55°C to +150°C

The DMS3014SSS-13 is a high-performance, P-Channel enhancement mode field-effect transistor (FET) that utilizes the latest trench MOSFET technology. This technology ensures that the device offers one of the lowest on-resistance (R<sub>DS(on)) in its class, resulting in a highly efficient power management solution that minimizes heat generation and energy loss.

With a drain-source voltage (V<sub>DS) of -30V and a continuous drain current (I<sub>D) of -8.6A, this MOSFET is an ideal choice for power-intensive applications. Its compact size and low threshold voltage make it perfect for portable electronics, where power conservation is paramount. Moreover, the device is housed in a RoHS-compliant, SOP-8 package, which ensures a minimal footprint on the PCB and simplifies the assembly process.

Applications

Due to its robust performance characteristics, the DMS3014SSS-13 is suitable for a variety of applications, including:

  • Load switch circuits
  • Power management
  • Battery protection circuits
  • DC-DC converters
  • Portable devices

Diodes Incorporated's commitment to quality ensures that the DMS3014SSS-13 meets the highest standards for reliability and performance. Whether you're designing for consumer electronics, automotive systems, or industrial applications, the DMS3014SSS-13 MOSFET is a versatile component that will enhance the efficiency and longevity of your product.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7302 $58.4160
195+ $0.5992 $116.8440
300+ $0.5805 $174.1500
415+ $0.5618 $233.1470
535+ $0.5430 $290.5050
715+ $0.4869 $348.1335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,300 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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