DMT2004UFDF-7

Part No DMT2004UFDF-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 14.1A 6UDFN / N-Channel 24 V 14.1A (Ta) 800mW (Ta), 12.5W (Tc) Surface Mount U-DFN2020-6 (Type F)
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Rohs State rohs
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Products specifications

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24 V
Current - Continuous Drain (Id) @ 25°C 14.1A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.7 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1683 pF @ 15 V
Power Dissipation (Max) 800mW, 12.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package U-DFN2020-6 (Type F)
Case / Package 6-UDFN Exposed Pad
Base Product Number DMT2004
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMT2004UFDF-7DICT,DMT2004UFDF-7-ND,DMT2004UFDF-7DITR,DMT2004UFDF-7DIDKR
Standard Package 3,000
Win Source Part Number 1324325-DMT2004UFDF-7

Description

The DMT2004UFDF-7 is a high-performance, dual N-channel enhancement mode field effect transistor (FET) from Diodes Incorporated, designed for power switching and amplification applications. This versatile component is housed in a compact, surface-mount UltraDFN2020 package, making it an ideal choice for space-constrained designs.

Key Features

  • Low On-Resistance: The device offers very low on-resistance (RDS(on)), which results in reduced conduction losses and improved power efficiency in applications.
  • High Continuous Drain Current: With a high continuous drain current (ID) capability, the DMT2004UFDF-7 can handle significant levels of current, making it suitable for high-power applications.
  • Dual N-Channel MOSFET: The dual N-channel configuration allows for flexibility in design, enabling designers to use the device in various circuit topologies.
  • Low Threshold Voltage: The low threshold voltage (VGS(th)) ensures that the transistor can be easily driven into conduction with low gate voltages.
  • UltraDFN2020 Package: The small footprint of the UltraDFN2020 package allows for a more compact overall design, which is critical in portable and space-sensitive applications.
  • RoHS Compliant: The DMT2004UFDF-7 is compliant with the RoHS directive, making it suitable for use in environmentally sensitive applications.

Applications

The DMT2004UFDF-7 is designed for a wide range of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Powered Devices
  • Load Switches
  • Motor Control Systems
  • Computing and Networking Systems

Product Summary

The DMT2004UFDF-7 by Diodes Incorporated exemplifies the company's commitment to providing efficient and reliable semiconductor solutions. With its low on-resistance, high current handling, and compact packaging, this dual N-channel MOSFET is engineered to meet the demands of modern electronic designs, delivering performance and power efficiency in a wide array of applications. Its compliance with RoHS standards further underscores its suitability for environmentally conscious designs.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
175+ $0.2902 $50.7850
420+ $0.2382 $100.0440
655+ $0.2307 $151.1085
900+ $0.2233 $200.9700
1,160+ $0.2158 $250.3280
1,555+ $0.1935 $300.8925
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 17,100 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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