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DMT6002LPS-13

Part No DMT6002LPS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A PWRDI5060-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 39 Weeks
Features N-Channel 60 V 100A (Tc) 2.3W Surface Mount PowerDI5060-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN
Case / Package PowerDI5060-8
Family Name DMT6002
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869138-DMT6002LPS-13
Ultra Librarian 3D Model Ultra Librarian DMT6002LPS-13 CAD Model

Description

Introducing the DMT6002LPS-13 MOSFET from Diodes Incorporated

The DMT6002LPS-13 is a high-performance, P-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets. This MOSFET is part of their extensive lineup of power management devices, catering to the needs of energy-efficient and compact designs.

With its small form factor, the DMT6002LPS-13 is housed in a PowerDI3333-8 type package, which offers a reduced footprint on PCBs and is ideal for space-constrained applications. This MOSFET is designed to operate at a drain-source voltage (V<sub>DS) of -60V, with a continuous drain current (I<sub>D) of -5.3A at a temperature of 25°C. The device also boasts a low on-resistance (R<sub>DS(on)) of 38mΩ at V<sub>GS = -10V, ensuring high efficiency and minimal power loss during operation.

One of the key features of the DMT6002LPS-13 is its robust and durable design. The device is characterized by its high power and thermal performance, making it suitable for a wide range of applications, including load switch, power management, and battery protection circuits. Its fast switching speed and low gate charge (Q<sub>G) enhance its performance in high-frequency circuits, where switching losses are critical.

Furthermore, the DMT6002LPS-13 incorporates advanced trench MOSFET technology, which provides superior performance in terms of gate charge and R<sub>DS(on), leading to lower conduction and switching losses. This technology also contributes to the device's ability to handle high pulsed current without degradation, ensuring reliability and longevity in demanding applications.

Diodes Incorporated has designed the DMT6002LPS-13 with environmental concerns in mind. The device is RoHS compliant, meaning it does not contain hazardous substances such as lead, making it suitable for use in green electronics. Additionally, its efficiency contributes to reduced energy consumption, aligning with the global trend towards sustainability.

In summary, the DMT6002LPS-13 is an exemplary choice for designers looking for a reliable, efficient, and space-saving P-Channel MOSFET. Its combination of low on-resistance, high-speed switching, and compact packaging makes it a versatile component for a diverse array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3509 $51.7198
52+ $1.9290 $100.3080
81+ $1.8687 $151.3647
111+ $1.8084 $200.7324
144+ $1.7482 $251.7408
192+ $1.5673 $300.9216
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,139 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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