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DMT6009LSS-13

Part No DMT6009LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10.8A 8SO T&R 2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features N-Channel 60 V 10.8A (Ta) 1.25W (Ta) Surface Mount 8-SO
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SO
Family Name DMT6009
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMT6009LSS-13DITR, DMT6009LSS-13DIDKR, DMT6009LSS-13DICT
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869150-DMT6009LSS-13
Ultra Librarian 3D Model Ultra Librarian DMT6009LSS-13 CAD Model

Description

Introducing the DMT6009LSS-13 MOSFET from Diodes Incorporated

The DMT6009LSS-13 is a state-of-the-art MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This power management component is designed to cater to a wide array of applications, ranging from power supplies to motor drives, ensuring efficiency and reliability.

Key Features

  • Low On-Resistance: The DMT6009LSS-13 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant amounts of current, making it suitable for high-power applications.
  • PowerDI®5060-8 Package: Encased in the compact and thermally efficient PowerDI®5060-8 package, the DMT6009LSS-13 offers excellent power density and is ideal for space-constrained applications.
  • Low Threshold Voltage: The device features a low threshold voltage (V<sub>GS(th)), ensuring it can be easily driven at lower gate voltages, which is beneficial for battery-operated devices.

Applications

The DMT6009LSS-13 is versatile and can be used in various applications, including:

  • DC-DC Converters
  • Power Management Functions
  • Load Switches
  • Motor Drives
  • Battery Powered Devices
  • Computing and Server Applications

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 60V Continuous Drain Current (I<sub>D) 18A Power Dissipation (P<sub>D) 3.8W On-Resistance (R<sub>DS(on)) 8.5mΩ at V<sub>GS = 10V

With its robust design and high performance, the DMT6009LSS-13 MOSFET from Diodes Incorporated is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems. Its thermal and electrical characteristics make it an indispensable component for modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6610 $59.4900
215+ $0.5424 $116.6160
330+ $0.5255 $173.4150
455+ $0.5086 $231.4130
590+ $0.4916 $290.0440
790+ $0.4407 $348.1530
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,420 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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