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FMMT634QTA

Part No FMMT634QTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 100V 0.9A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 900mA
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 960mV @ 5mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 20000 @ 100mA, 5V
Maximum Power Dissipation 806mW
Frequency - Transition 140MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Win Source Part Number 1039181-FMMT634QTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FMMT634QTA CAD Model

Description

Diodes Incorporated FMMT634QTA - High-Performance Transistor

The FMMT634QTA from Diodes Incorporated is a cutting-edge bipolar junction transistor (BJT) that offers high-speed switching and low saturation voltage, making it an excellent choice for a wide range of applications. This NPN transistor is part of the company’s renowned FMMT series, known for its reliability and efficiency in electronic circuits.

With its compact SOT23 package, the FMMT634QTA is designed to save valuable board space while providing exceptional thermal performance. This package is not only space-efficient but also robust, ensuring the transistor can handle the mechanical stresses that may occur during PCB assembly and operation.

The FMMT634QTA boasts a collector-emitter voltage (VCEO) of 230V, which allows it to be used in circuits with higher operating voltages. This characteristic is especially beneficial in power supply applications, where voltage headroom is crucial. Additionally, the transistor has a collector current (IC) rating of 1A, providing ample current handling capability for a variety of electronic designs.

One of the key features of the FMMT634QTA is its low collector-emitter saturation voltage (VCE(sat)). This parameter is critical in applications where power efficiency is a priority, as it reduces the power dissipation and heat generation within the transistor. The low VCE(sat) also contributes to improved overall system efficiency and longer battery life in portable applications.

Moreover, the FMMT634QTA has a high gain-bandwidth product (fT), which is indicative of its ability to operate at high frequencies. This makes it particularly suitable for amplification and switching in RF applications, audio amplifiers, and signal processing circuits where fast response times are required.

In summary, the FMMT634QTA from Diodes Incorporated is a versatile and high-performance NPN transistor that excels in applications requiring fast switching, high voltage operation, and power efficiency. Its compact size, high current capacity, and low saturation voltage make it a valuable component in modern electronic designs.

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