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FZT600TA

Part No FZT600TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 140V 2A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 140V
Max Vce (sat) 1.2V @ 10mA, 1A
Collector Cut-off Current(Max) 10μA
Typical Gain (hFE) (Min) 2000 @ 500mA, 10V
Maximum Power Dissipation 2W
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 016598-FZT600TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FZT600TA CAD Model

Description

Introducing the FZT600TA - A High-Performance Transistor from Diodes Incorporated

The FZT600TA is a superior bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal components. This PNP transistor is engineered to deliver exceptional performance for a wide range of applications, making it an ideal choice for designers looking for reliability and efficiency.

The FZT600TA boasts a collector-emitter voltage (VCEO) of -50V and a collector current capability of up to -3A, providing ample headroom for circuit designs that demand high power handling capabilities. Its high current capacity coupled with a power dissipation of 2W ensures that the transistor can handle significant levels of power without compromising on performance or reliability.

With a transition frequency (fT) of 150MHz, the FZT600TA is optimized for high-speed switching, making it particularly suitable for amplification and switching applications in the audio, signal processing, and power regulation sectors. This high frequency response is beneficial for designs that require fast switching times and precise control over signal processing tasks.

One of the standout features of the FZT600TA is its hFE (DC current gain) range, which is specified to be between 100 and 1000. This ensures a consistent and predictable gain across various operating conditions, providing designers with the confidence that their circuits will perform as intended, without the need for extensive gain compensation.

The device comes in a compact SOT-223 package, which not only saves valuable board space but also offers improved thermal performance compared to smaller packages. This makes the FZT600TA an excellent choice for space-constrained applications that require efficient heat dissipation.

Diodes Incorporated has designed the FZT600TA with a focus on robustness and longevity. It features excellent saturation voltage characteristics, minimizing on-state losses and enhancing overall energy efficiency. Whether it's for power management, motor control, or general-purpose amplification, the FZT600TA stands as a testament to Diodes Incorporated's commitment to providing high-quality, reliable semiconductor products.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to visit the Diodes Incorporated website or contact their local sales representative to learn more about the FZT600TA and how it can be integrated into their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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