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FZT603QTA

Part No FZT603QTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 80V 2A SOT223-3 / Bipolar (BJT) Transistor NPN - Darlington 80 V 2 A 150MHz 1.2 W Surface Mount SOT-223-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1.13V @ 20mA, 2A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 500mA, 5V
Power - Max 1.2 W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
Base Product Number FZT603
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0075
Other Names FZT603QTADI
Standard Package 1,000
Win Source Part Number 1060067-FZT603QTA
Ultra Librarian 3D Model Ultra Librarian FZT603QTA CAD Model

Description

Overview of Product FZT603QTA from Diodes Incorporated

The FZT603QTA is a high-performance PNP bipolar transistor designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This transistor is part of Diodes Incorporated's extensive range of transistor products known for their reliability and efficiency.

Key Features

  • Type: PNP bipolar transistor
  • Package: SOT-223, a surface-mount technology package that allows for efficient automated assembly and good thermal performance.
  • Collector-Emitter Voltage (Vceo): -100V, providing a robust voltage rating for a range of applications.
  • Collector Current (Ic): Up to -3A, which is suitable for medium power applications.
  • Power Dissipation (Pd): 2W, ensuring the device can handle a significant amount of power without overheating.
  • DC Current Gain (hFE): High hFE, indicating efficient current amplification when in operation.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C, allowing for operation in a wide range of environmental conditions.

Applications

The FZT603QTA is ideal for use in various applications that require PNP bipolar transistors. Some common applications include:

  • Power management circuits
  • Switching regulators
  • Motor control drivers
  • Audio amplifiers
  • Signal processing

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The FZT603QTA transistor is built with the latest semiconductor technology, ensuring consistent performance and long-term reliability. Each device is rigorously tested to meet the stringent standards set by Diodes Incorporated and the industry.

Support and Resources

Customers looking to integrate the FZT603QTA into their designs can access a wealth of resources provided by Diodes Incorporated. This includes detailed datasheets, application notes, and technical support from their team of experts. Diodes Incorporated's commitment to customer service ensures that you have the support needed to implement their products successfully.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.2971 $50.5070
415+ $0.2438 $101.1770
640+ $0.2362 $151.1680
875+ $0.2286 $200.0250
1,135+ $0.2210 $250.8350
1,515+ $0.1981 $300.1215
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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