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FZT851QTA

Part No FZT851QTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 6A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor NPN 60 V 6 A 130MHz 3 W Surface Mount SOT-223-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-261-4, TO-261AA
Case / Package SOT-223-3
Family Name FZT851
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number -FZT851QTADITR, FZT851QTADI, -FZT851QTADICT
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 919421-FZT851QTA
Ultra Librarian 3D Model Ultra Librarian FZT851QTA CAD Model

Description

Introducing the FZT851QTA NPN Transistor from Diodes Incorporated

The FZT851QTA is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This transistor is a part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal components that are engineered to provide innovative solutions across various electronic applications.

The FZT851QTA is specifically created to offer a blend of efficiency and reliability for a wide range of switching and amplification purposes. It features a collector-emitter voltage (Vceo) of 60V, and a collector current (Ic) of up to 5A, making it an excellent choice for medium power applications. Furthermore, the device supports a continuous collector current of 3A, ensuring stable performance under a variety of conditions.

With a power dissipation of 2W, the FZT851QTA can handle a significant amount of energy without succumbing to performance degradation. This makes it suitable for demanding environments where thermal management is a critical aspect of design. The transistor also boasts a high gain bandwidth product (fT) of 100MHz, which is ideal for high-speed switching applications.

One of the key features of the FZT851QTA is its hFE (DC current gain) range of 100 to 600, which provides designers with the flexibility to achieve the desired amplification in their circuit designs. Its surface-mount package allows for efficient PCB layout and space-saving, which is crucial in modern compact electronic devices.

The FZT851QTA transistor is housed in a SOT-223 package, which is not only robust but also provides excellent thermal performance. This packaging ensures that the device can operate reliably over a wide temperature range, making it suitable for industrial and automotive applications that may experience extreme temperature variations.

Overall, the FZT851QTA from Diodes Incorporated is a versatile and dependable component that offers designers a perfect balance of power handling, speed, and gain characteristics. Whether it's for power regulation, signal amplification, or switching, the FZT851QTA is designed to meet the stringent requirements of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5445 $51.7275
225+ $0.4468 $100.5300
350+ $0.4329 $151.5150
480+ $0.4189 $201.0720
620+ $0.4049 $251.0380
830+ $0.3630 $301.2900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 199 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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