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FZT857TA

Part No FZT857TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 300V 3.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 300V 3.5A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 3.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 345mV @ 600mA, 3.5A
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 10V
Maximum Power Dissipation 3W
Frequency - Transition 80MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 016622-FZT857TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name FZT857
Introduction Date October 28, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian FZT857TA CAD Model

Description

The FZT857TA is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This particular transistor is well-suited for a wide range of applications, including power management, signal amplification, and switching applications where efficiency and thermal performance are critical.

Key Features

  • High Current Capability: The FZT857TA is capable of handling continuous collector currents up to 5A, making it suitable for high-power applications.
  • High Voltage Tolerance: With a collector-emitter voltage (VCEO) of 300V, it can be used in circuits that experience high voltage transients.
  • High hFE: The high DC current gain (hFE) allows for a higher level of amplification, making this transistor ideal for audio amplifiers and other signal processing devices.
  • Fast Switching Speed: Its fast switching times enable high-frequency operation, which is beneficial for switching regulators and converters.
  • Low Saturation Voltage: The low VCE(sat) helps to minimize power loss and improve efficiency in switching applications.
  • Thermal Performance: The FZT857TA is provided in a SOT-223 package, which offers excellent power dissipation and thermal management capabilities.

Applications

The versatility of the FZT857TA makes it an excellent choice for a variety of electronic applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • Signal amplification
  • Switching regulators
  • Driver stages in high-fidelity amplifiers and sound reinforcement systems

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The FZT857TA is built to meet rigorous standards, ensuring reliability and performance for critical applications. With its robust design and Diodes Incorporated's attention to quality, the FZT857TA is a dependable choice for designers looking to incorporate a high-performance NPN transistor into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5489 $52.1455
195+ $0.5142 $100.2690
305+ $0.4968 $151.5240
435+ $0.4621 $201.0135
565+ $0.4447 $251.2555
705+ $0.4273 $301.2465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 144,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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