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MBR30H100CTF-E1

Part No MBR30H100CTF-E1
Manufacturer Diodes Incorporated
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTT 100V TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Tube/Rail
Status Active
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) (per Diode) 15A
Voltage - Forward (Vf) (Max) @ If 800mV @ 15A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 4.5μA @ 100V
Operating Temperature - Junction -65°C to 175°C
Mounting Through Hole
Case / Package TO-220F-3
Win Source Part Number 003338-MBR30H100CTF-E1
Ultra Librarian 3D Model Ultra Librarian MBR30H100CTF-E1 CAD Model

Description

MBR30H100CTF-E1 Schottky Barrier Rectifier

The MBR30H100CTF-E1 is a high-performance Schottky barrier rectifier from Diodes Incorporated, designed to meet the demanding requirements of high-efficiency power supply applications. This rectifier is well-suited for use in a variety of electronic devices, including power factor correction (PFC) circuits, free-wheeling diodes, and polarity protection applications.

Key Features

  • High Forward Surge Capability: The MBR30H100CTF-E1 is capable of handling high surge currents, making it reliable for applications that experience occasional surges.
  • Low Power Loss/High Efficiency: With its Schottky barrier design, this rectifier offers lower forward voltage drop compared to traditional PN junction rectifiers, resulting in reduced power loss and higher efficiency.
  • High Junction Temperature Capability: The device can operate at junction temperatures as high as 150°C, providing a wider margin for thermal conditions in challenging environments.
  • Guard Ring Die Construction: The inclusion of a guard ring enhances the device's ruggedness and long-term reliability by providing protection against voltage spikes and transients.

Electrical Characteristics

  • Maximum Repetitive Reverse Voltage (VRRM): 100V
  • Maximum Average Forward Rectified Current (IF(AV)): 30A
  • Peak Forward Surge Current (IFSM): 250A
  • Forward Voltage Drop (VF): 0.82V at 15A
  • Operating Junction Temperature Range: -65°C to +150°C

Package and Mounting

The MBR30H100CTF-E1 comes in a TO-220F full-pack package, which provides isolated mounting and heat sinking capabilities. This package is widely used in power applications and is compatible with standard PCB layout designs.

Applications

  • Switching power supplies
  • Converters
  • Free-wheeling diodes
  • Reverse battery protection
  • Automotive applications
  • Power factor correction (PFC) circuits

With its robust design and superior electrical characteristics, the MBR30H100CTF-E1 from Diodes Incorporated is a reliable and efficient choice for engineers looking to improve the performance and durability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,600 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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