Product Overview: MMBT3904-7-05-F from Diodes Incorporated

The MMBT3904-7-05-F is a high-quality NPN bipolar junction transistor (BJT) from Diodes Incorporated, a leading manufacturer in the semiconductor industry. This transistor is designed for general-purpose amplifier and switching applications, making it a versatile component for a wide range of electronic circuits.

Key Features

• Device Type: NPN Bipolar Junction Transistor (BJT)
• Package: SOT-23, a small and efficient surface-mount package that is widely used in today's compact electronic designs.
• Collector-Emitter Voltage (Vceo): 40V, which allows it to handle moderate voltage applications with ease.
• Collector Current (Ic): Up to 200mA, providing sufficient current handling for a variety of applications.
• DC Current Gain (hFE): 100 to 300 at Ic = 10mA, ensuring good amplification characteristics for signal processing.
• Transition Frequency (fT): 300MHz, making it suitable for high-speed switching and amplification.
• Operating Temperature Range: -55°C to +150°C, offering reliable performance under extreme conditions.
• Moisture Sensitivity Level (MSL): 1, indicating that it can withstand exposure to moisture during the soldering process without degrading its performance.

Applications

The MMBT3904-7-05-F is ideal for a multitude of applications including, but not limited to:

• General-purpose amplification
• Switching circuits
• Linear amplification
• Signal processing
• Power management
• Consumer electronics
• Automotive applications

With its excellent performance characteristics and reliability, the MMBT3904-7-05-F is a preferred choice for designers and engineers who require a dependable NPN transistor for their electronic designs. Diodes Incorporated ensures that this component meets the highest standards of quality, making it a solid addition to any electronic component inventory.