The MMBT3904-7-G from Diodes Incorporated is a high-quality NPN bipolar junction transistor (BJT) that is widely used in electronic applications requiring amplification and switching. This small-signal transistor is a versatile component designed to suit a vast range of applications due to its efficient performance characteristics and reliability.

Key Features

• Device Type: NPN Bipolar Junction Transistor (BJT)
• Package: SOT-23, a compact surface-mount package that is suitable for automated assembly processes and saves board space.
• Configuration: Single transistor, allowing for flexibility in circuit design.
• Collector-Emitter Voltage (Vceo): 40V, providing a good voltage handling capability for a range of applications.
• Collector Current (Ic): 200mA, sufficient for driving various small loads.
• DC Current Gain (hFE): 100 to 300, ensuring good amplification characteristics for signal processing.
• Transition Frequency (fT): 300MHz, enabling the transistor to be used in high-frequency applications.
• Operating Temperature Range: -55°C to +150°C, offering robust performance in extreme environmental conditions.
• RoHS Compliant: Yes, meeting environmental standards and restrictions on hazardous substances.

Applications

The MMBT3904-7-G is suitable for a variety of applications, including but not limited to:

• General-purpose amplification
• Switching applications
• Signal processing
• Digital logic circuits
• Power management
• Consumer electronics
• Telecommunication devices

With its excellent performance and reliability, the MMBT3904-7-G is a go-to component for designers and engineers looking for a general-purpose NPN transistor that can fit into a compact SOT-23 package. Diodes Incorporated's commitment to quality ensures that this transistor meets the needs of a wide range of electronic circuits and designs.