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MMBTH10-7-F

Part No MMBTH10-7-F
Manufacturer Diodes Incorporated
Catalog RF Transistors (BJT)
Description TRANS NPN VHF/UHF 25V SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Frequency - Transition 650MHz
Maximum Power Dissipation 300mW
Typical Gain (hFE) (Min) 60 @ 4mA, 10V
Maximum Current Collector 50mA
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 023807-MMBTH10-7-F
Ultra Librarian 3D Model Ultra Librarian MMBTH10-7-F CAD Model

Description

Product Overview: MMBTH10-7-F from Diodes Incorporated

The MMBTH10-7-F is a high-performance NPN RF transistor designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This transistor is specifically engineered to meet the demanding requirements of RF amplification and switching applications.

Key Features

  • High Frequency Performance: The MMBTH10-7-F operates at very high frequencies, with a transition frequency (fT) typically at 900MHz, making it suitable for a wide range of RF applications.
  • Low Noise Figure: With a low noise figure, this transistor ensures clear signal amplification, which is critical in communication systems and sensitive RF circuits.
  • Surface-Mount Package: The SOT-23 package is compact and suitable for automated assembly processes, allowing for efficient manufacturing and space-saving designs on printed circuit boards (PCBs).
  • High Power Gain: It offers a high power gain, which is essential for amplifying weak signals without significant power loss.
  • Lead-Free and RoHS Compliant: The MMBTH10-7-F is lead-free and complies with the RoHS directive, making it an environmentally friendly option for electronic devices.

Applications

The MMBTH10-7-F is ideal for a variety of applications where high-frequency performance and efficient signal amplification are required. These applications include:

  • RF Amplifiers
  • Low Noise Amplifiers (LNAs)
  • Oscillator Circuits
  • Mixer Circuits
  • IF Amplifiers in TV and Radio Receivers
  • Wireless Communication Devices
  • Portable and Consumer Electronics

Reliability and Quality

Diodes Incorporated is committed to providing high-quality semiconductor products. The MMBTH10-7-F is subjected to rigorous testing and quality control measures to ensure reliable performance in the field. The product's robust design ensures longevity and consistent operation, even in challenging environments.

With its combination of high-frequency operation, low noise, and compact packaging, the MMBTH10-7-F from Diodes Incorporated stands out as an excellent choice for designers looking to optimize their RF signal processing applications.

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