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ZTX689BSTZ

Part No ZTX689BSTZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V 3A E-LINE / Trans GP BJT NPN 20V 3A 1000mW 3-Pin E-Line Box
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Tape in Box
Transistor Type NPN
Current - Collector (Ic) (Maximum) 3A
Voltage - Collector Emitter Breakdown (Maximum) 20V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 10mA, 2A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 400 @ 2A, 2V
Power - Max 1W
Frequency - Transition 150MHz
Operating Temperature Range -55°C ~ 200°C (TJ)
Mounting Style Through Hole
Package E-Line-3, Formed Leads
Manufacturer Package E-Line (TO-92 compatible)
Win Source Part Number 800412-ZTX689BSTZ
Popularity Medium
Supply and Demand Status Limited
Family Name ZTX689B
Introduction Date October 29, 1997
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian ZTX689BSTZ CAD Model

Description

The ZTX689BSTZ from Diodes Incorporated is a high-performance bipolar transistor that is designed to deliver superior switching performance and reliability. This component is a part of Diodes Incorporated's extensive range of bipolar transistors, which are known for their high quality and efficiency in various electronic applications.

The ZTX689BSTZ is a low saturation, NPN silicon planar medium power transistor. It is encapsulated in a small surface-mount package, which makes it suitable for automated assembly processes and applications where space is at a premium. The transistor is characterized by its high gain and low saturation voltage, which makes it an excellent choice for use in power management circuits, driving motors, and other high-speed switching applications.

Key Features:

  • High Current Gain (hFE): Ensures efficient operation even at high currents, which is essential for power regulation and control applications.
  • Low Saturation Voltage (V<sub>CE(sat)): Reduces power loss during switching, enhancing overall system efficiency and performance.
  • High Power Dissipation: Capable of dissipating significant amounts of power without overheating, making it reliable for strenuous operating conditions.
  • Robust Thermal Performance: The device can operate effectively over a wide temperature range, ensuring stability and reliability in various environments.
  • Surface-Mount Package: Offers a compact form factor that is ideal for modern, space-constrained electronic designs.

Applications:

The ZTX689BSTZ transistor is versatile and can be used in a wide array of applications. Its primary uses include but are not limited to:

  • Power Management Circuits: Ideal for regulating and controlling power within electronic systems.
  • Motor Control: Provides the necessary drive for motor control circuits in both industrial and consumer applications.
  • Switching Regulators: Efficiently handles the rapid switching required in modern switching regulators.
  • Amplification: Can be utilized in signal amplification circuits due to its high gain characteristics.

With its combination of efficiency, reliability, and compact size, the ZTX689BSTZ from Diodes Incorporated is an excellent choice for designers looking to optimize their electronic systems while maintaining high performance and quality standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2758 $57.9180
515+ $0.2264 $116.5960
790+ $0.2194 $173.3260
1,090+ $0.2122 $231.2980
1,410+ $0.2051 $289.1910
1,885+ $0.1839 $346.6515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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