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ZVN0120ASTOA

Part No ZVN0120ASTOA
Manufacturer Diodes Incorporated
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Diodes Incorporated
Win Source Part Number 418522-ZVN0120ASTOA
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN0120ASTOA CAD Model

Description

Introducing the ZVN0120ASTOA - A High-Performance MOSFET from Diodes Incorporated

Diodes Incorporated presents the ZVN0120ASTOA, a robust N-Channel Enhancement Mode Vertical DMOS FET designed for high-density power applications. This versatile transistor is an ideal choice for designers looking to achieve efficient power management in their electronic circuits.

Key Features of the ZVN0120ASTOA

  • Low On-Resistance: The ZVN0120ASTOA boasts an impressively low on-resistance, which translates to reduced power loss and improved efficiency in operation. This feature is critical for applications that require high current handling with minimal voltage drop.
  • High-Speed Switching: Engineered for speed, this MOSFET facilitates high-speed switching, making it suitable for a broad range of applications, including power supplies, converters, and motor control circuits.
  • Gate Protection Diode: An integrated gate protection diode ensures that the device is safeguarded against excessive voltage, thus enhancing its reliability and longevity in demanding environments.
  • Low Threshold Voltage: The low threshold voltage of the ZVN0120ASTOA ensures that it can be driven by low-voltage logic signals, making it compatible with modern microcontroller-based systems.

Applications

The ZVN0120ASTOA is an excellent choice for a multitude of applications, including but not limited to:

  • DC-DC converters
  • Power management functions
  • Motor control systems
  • Load switching
  • Relay replacement

Technical Specifications

With a continuous drain current of 280 mA and a power dissipation of 1.3 W, the ZVN0120ASTOA is capable of handling moderate power levels. Its maximum drain-source voltage is 200 V, which allows it to be used in circuits with higher operating voltages. Additionally, the device operates over a -55°C to +150°C temperature range, ensuring performance stability across a wide range of environmental conditions.

For designers seeking a reliable and efficient solution for their power control needs, the ZVN0120ASTOA from Diodes Incorporated offers a compelling mix of performance, durability, and versatility. Whether it's for industrial, commercial, or consumer electronics, this MOSFET is engineered to deliver top-notch results where it counts.

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