The ZVN2110GTA is a robust N-channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This semiconductor device is engineered to deliver high performance, reliability, and efficiency for a wide range of applications.

Key Features

• Device Type: N-Channel MOSFET
• Configuration: Single
• Drain-Source Breakdown Voltage (V_DS): 100V
• Continuous Drain Current (I_D): 900mA
• R_DS(on): 5 Ohms at V_GS = 10V
• Power Dissipation (P_D): 1.75W
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223

Applications

The ZVN2110GTA MOSFET is suitable for a diverse array of applications, including but not limited to:

• Power Management
• Load Switching
• Motor Control
• DC-DC Converters
• Battery Management Systems

Quality and Performance

Diodes Incorporated's commitment to quality ensures that the ZVN2110GTA MOSFET meets the highest standards of performance and reliability. The device is designed to withstand harsh environments and provide a long operational lifespan, making it an excellent choice for industrial and commercial applications that demand durability and consistency.

Environmental Compliance

The ZVN2110GTA is environmentally friendly and complies with RoHS directives, reflecting Diodes Incorporated's dedication to sustainability and environmental responsibility. Customers can trust that they are using a product that not only meets their performance needs but also aligns with green initiatives.

Whether you are designing power supplies, managing battery-powered devices, or developing energy-efficient solutions, the ZVN2110GTA from Diodes Incorporated offers the performance, reliability, and quality you need to power your innovations.