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ZXM62N03E6TA

Part No ZXM62N03E6TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.2A SOT-23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 9.6nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 2.2A, 10V
Mounting SMD (SMT)
Case / Package SOT-23-6
Dimension SOT-23-6
Win Source Part Number 057856-ZXM62N03E6TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXM62N03E6TA CAD Model

Description

The ZXM62N03E6TA is a high-performance, N-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a reputable manufacturer known for its reliable and efficient semiconductor components. This MOSFET is designed to deliver optimal performance for a wide range of applications, including but not limited to power management, switching circuits, and high-speed DC-DC converters.

Key Features

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High-Speed Switching: With its fast switching capabilities, the ZXM62N03E6TA is ideal for applications that require rapid on-off cycles, ensuring efficient operation with minimal delay.
  • High Continuous Drain Current: It offers a high continuous drain current (I<sub>D), allowing it to handle significant power levels and making it suitable for high-power applications.
  • Low Threshold Voltage: The low threshold voltage (V<sub>GS(th)) ensures that the MOSFET can be easily driven by low-voltage control signals, increasing its versatility in various circuit designs.

Applications

The ZXM62N03E6TA is a versatile component that can be used in a variety of electronic devices and systems. Some of its common applications include:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switching
  • Power management for portable devices

Quality and Reliability

Diodes Incorporated ensures that the ZXM62N03E6TA meets stringent quality standards, offering reliability and performance that engineers and designers can trust. The device is available in a compact SOT-23 package, which not only saves space on the PCB but also provides excellent thermal performance.

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 1.7A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C

Overall, the ZXM62N03E6TA from Diodes Incorporated is a robust and efficient solution for designers looking to enhance their electronic designs with a powerful and reliable N-Channel MOSFET.

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