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ZXM64P03XTC

Part No ZXM64P03XTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.8A 8MSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 825pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 75 mOhm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MSOP
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 1120368-ZXM64P03XTC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXM64P03XTC CAD Model

Description

The ZXM64P03XTC from Diodes Incorporated is a high-performance, P-channel enhancement mode MOSFET designed for a variety of applications that demand efficient power management and high reliability. This powerful semiconductor is crafted to operate with a -30V drain-source voltage and has a continuous drain current of -3A, making it a suitable choice for a wide range of power switching functions.

The device is housed in a compact SOT23 package, which is not only space-saving but also offers excellent power dissipation and thermal characteristics. This feature makes the ZXM64P03XTC an ideal component for space-constrained applications where efficient heat dissipation is crucial.

With its low threshold voltage and low on-resistance (R<sub>DS(on)), the ZXM64P03XTC ensures minimal conduction losses, which is a significant advantage in power-sensitive designs. The low threshold voltage also enables the MOSFET to be driven at lower gate voltages, which can be particularly beneficial when interfacing with low-voltage logic circuits.

Diodes Incorporated has engineered the ZXM64P03XTC with robustness in mind. The device features built-in protection against electrostatic discharge (ESD), which safeguards the MOSFET from sudden voltage spikes that can occur during handling and operation. This ESD protection, along with the high reliability of the device, contributes to its longevity and stable performance over time.

The ZXM64P03XTC is versatile and can be utilized in a variety of applications, including power management circuits, battery-powered devices, load switches, and other applications that require a high-efficiency P-channel MOSFET. Whether you're designing a portable gadget, a power supply, or any other electronic system that necessitates a dependable P-channel MOSFET, the ZXM64P03XTC from Diodes Incorporated is a component that promises to meet and exceed your design requirements.

In summary, the ZXM64P03XTC is a testament to Diodes Incorporated's commitment to providing high-quality, high-performance components for today's innovative electronic solutions.

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