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ZXMC3A17DN8TC

Part No ZXMC3A17DN8TC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.1A, 3.4A
Maximum Rds On at Id,Vgs 50 mOhm @ 7.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 12.2nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1120370-ZXMC3A17DN8TC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMC3A17DN8TC CAD Model

Description

Introducing the ZXMC3A17DN8TC from Diodes Incorporated

The ZXMC3A17DN8TC is a cutting-edge, high-performance MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is specifically engineered to meet the demanding requirements of power management applications across a wide range of electronic devices and systems.

Key Features

  • Low On-Resistance: The ZXMC3A17DN8TC boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in circuit operation. This makes it an ideal choice for applications where power conservation is critical.
  • High Continuous Drain Current: With its ability to support a high continuous drain current, this MOSFET can handle significant power without compromising performance, making it suitable for high-power applications.
  • Enhanced Thermal Performance: The device is designed with thermal management in mind, featuring an optimized package that aids in heat dissipation, ensuring reliable operation even under strenuous conditions.
  • Dual N-Channel: The dual N-channel configuration allows for flexibility in design, enabling the creation of more compact and efficient circuit layouts.
  • Advanced Packaging: Housed in a compact 8-pin SOIC package, the ZXMC3A17DN8TC minimizes the footprint on printed circuit boards, allowing for high-density component placement.

Applications

The versatility of the ZXMC3A17DN8TC makes it an excellent choice for a variety of applications, including:

  • DC/DC converters
  • Power management modules
  • Motor drives and controllers
  • Computing peripherals
  • Battery management systems
  • LED lighting solutions

Product Reliability and Support

Diodes Incorporated is committed to the highest standards of quality and reliability. The ZXMC3A17DN8TC is built to not only meet but exceed industry standards for performance and durability. Customers can also rely on Diodes Incorporated's comprehensive technical support to integrate this MOSFET into their designs effectively.

In summary, the ZXMC3A17DN8TC from Diodes Incorporated represents a blend of performance, efficiency, and reliability, making it a top choice for designers seeking to optimize their power management solutions.

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Shipping Information

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