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ZXMN10A09KTC

Part No ZXMN10A09KTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5A DPAK / Trans MOSFET N-CH 100V 5A 3-Pin(2+Tab) DPAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1313pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.15W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 036949-ZXMN10A09KTC
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name ZXMN10A09K
Introduction Date February 16, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian ZXMN10A09KTC CAD Model

Description

Introducing the ZXMN10A09KTC MOSFET from Diodes Incorporated

The ZXMN10A09KTC is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed for use in a wide range of applications. Manufactured by Diodes Incorporated, a leading company in the semiconductor market, this MOSFET is part of their extensive portfolio of power management solutions.

With its compact and efficient surface-mount package, the ZXMN10A09KTC is optimized for low on-resistance and high switching performance. This makes it an ideal choice for power conversion and management tasks in modern electronic devices. The device is designed to handle continuous drain currents up to 5.4A, making it suitable for high-density power applications.

Key Features of the ZXMN10A09KTC:

  • Low On-Resistance: The MOSFET offers a very low RDS(on) of just 70 mΩ at VGS = 10V, which translates to reduced power losses and improved efficiency in operation.
  • High Continuous Drain Current: It can sustain a continuous drain current (ID) of up to 5.4A, allowing it to handle significant power levels.
  • High-Speed Switching: The device is designed for fast switching applications, providing quick response times and reducing switching losses.
  • Enhanced Thermal Performance: The MOSFET's power dissipation capabilities are enhanced by its excellent thermal characteristics, ensuring reliable operation even under high power and temperature conditions.
  • Advanced Packaging: Packaged in a small and thermally efficient SOT-23 package, the ZXMN10A09KTC is suitable for space-constrained applications while still providing excellent thermal management.

The ZXMN10A09KTC is a versatile component that can be used in a variety of circuits, including DC-DC converters, power supply circuits, motor control applications, and as a switch in general-purpose power applications. Its robust design ensures reliable performance and longevity, making it a preferred choice for designers looking for a MOSFET that delivers both power efficiency and space savings.

With its combination of low on-resistance, high current capability, and fast switching speeds, the ZXMN10A09KTC from Diodes Incorporated represents a superior solution for modern power management challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4008 $58.1160
355+ $0.3292 $116.8660
545+ $0.3188 $173.7460
750+ $0.3084 $231.3000
970+ $0.2980 $289.0600
1,295+ $0.2680 $347.0600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,600 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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