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ZXMN3A02N8TC

Part No ZXMN3A02N8TC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 26.8nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1120393-ZXMN3A02N8TC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMN3A02N8TC CAD Model

Description

Introducing the ZXMN3A02N8TC MOSFET from Diodes Incorporated

The ZXMN3A02N8TC is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed by the renowned semiconductor manufacturer, Diodes Incorporated. This device is a testament to the company's commitment to providing innovative solutions that meet the rigorous demands of modern electronic applications. The ZXMN3A02N8TC is an essential component for designers looking to achieve efficient power management and signal processing in their circuit designs.

Key Features

  • Low On-Resistance: The ZXMN3A02N8TC boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant power levels, making it suitable for high-power applications.
  • Enhanced Thermal Performance: The device is encapsulated in a thermally efficient package, ensuring optimal heat dissipation and reliable operation even under high-temperature conditions.
  • Fast Switching Speed: The fast switching characteristics of the ZXMN3A02N8TC enable quick response times, which is crucial for high-frequency circuit operation.

Applications

The ZXMN3A02N8TC is versatile and can be utilized in a wide range of applications. It is particularly well-suited for:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switches
  • Lighting systems
  • High-efficiency power management designs

Quality and Reliability

Diodes Incorporated is known for its strict quality control and the ZXMN3A02N8TC is no exception. It is designed to meet the highest standards of reliability and performance. The device undergoes rigorous testing to ensure it performs to specifications in a variety of conditions.

Packaging and Availability

The ZXMN3A02N8TC comes in a compact, surface-mount package, making it ideal for space-constrained applications. It is available in bulk quantities and can be ordered through Diodes Incorporated's extensive distribution network.

In conclusion, the ZXMN3A02N8TC from Diodes Incorporated is a robust and reliable MOSFET that offers designers a powerful tool for creating efficient and high-performance electronic designs. Its combination of low on-resistance, high current capability, thermal efficiency, and fast switching makes it an excellent choice for a multitude of applications.

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