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ZXMP10A13FTA

Part No ZXMP10A13FTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 0.6A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 3.5nC @ 10V
Max Input Capacitance 141pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 600mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 044175-ZXMP10A13FTA
Family Name ZXMP10A13F
Introduction Date March 15, 2005
ECCN EAR99
Country of Origin Germany
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMP10A13FTA CAD Model

Description

Introducing the ZXMP10A13FTA P-Channel MOSFET from Diodes Incorporated

The ZXMP10A13FTA is a high-performance P-Channel MOSFET that is part of the efficient and reliable semiconductor solutions offered by Diodes Incorporated. This MOSFET is designed to provide exceptional power switching with low on-state resistance, making it an ideal choice for a wide range of applications including power management, load switching, and battery management systems.

Constructed with the latest trench MOSFET technology, the ZXMP10A13FTA ensures minimal power loss and heat dissipation, which is essential for maintaining the efficiency and longevity of electronic devices. This component features a compact SOT-23 package, which is highly valued in space-constrained applications while still delivering the robust performance expected from larger devices.

Key specifications of the ZXMP10A13FTA include:

  • Drain-Source Voltage (VDS): -100V
  • Continuous Drain Current (ID): -1.4A
  • Power Dissipation (PD): 1.25W
  • Low On-Resistance (RDS(on)): 0.3Ω at VGS = -10V
  • Threshold Voltage (Vth): -2V to -4V

The device's low threshold voltage ensures that it can be driven by low-voltage control signals, making it compatible with modern microcontrollers and other logic-level devices. This feature is particularly important in portable electronics where battery life is critical, as it allows for efficient operation at lower voltages, thus conserving power.

Moreover, the ZXMP10A13FTA is characterized by fast switching speeds, which is a significant advantage in applications that require quick response times. The low capacitance of the device also contributes to its swift performance, ensuring that your circuits operate with minimal delay.

With its robust design and high reliability, the ZXMP10A13FTA from Diodes Incorporated is a superb choice for designers looking to optimize their power management solutions. Whether you're working on consumer electronics, automotive systems, or industrial controls, this P-Channel MOSFET will help you achieve efficient, compact, and reliable designs.

For detailed product information, datasheets, and support, visit the Diodes Incorporated website or contact their customer service for assistance in integrating the ZXMP10A13FTA into your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2061 $50.4945
595+ $0.1691 $100.6145
920+ $0.1639 $150.7880
1,265+ $0.1586 $200.6290
1,635+ $0.1533 $250.6455
2,185+ $0.1374 $300.2190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 227,542 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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