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ZXMP3F35N8TA

Part No ZXMP3F35N8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.3A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 77.1nC @ 10V
Max Input Capacitance 4600pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 214717-ZXMP3F35N8TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMP3F35N8TA CAD Model

Description

Introducing the ZXMP3F35N8TA P-Channel MOSFET by Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the ZXMP3F35N8TA, a high-performance P-Channel MOSFET designed to meet the rigorous demands of modern electronic circuits. This MOSFET is a perfect choice for power management applications, offering a combination of low on-resistance, high thermal performance, and a compact form factor.

Key Features

  • Device Type: P-Channel MOSFET
  • Package: The ZXMP3F35N8TA comes in a space-saving SOT-223 package, which is ideal for automated assembly processes and applications where board space is at a premium.
  • Drain-Source Voltage (V<sub>DS): It boasts a drain-source voltage of -30V, providing a robust voltage rating for various applications.
  • Continuous Drain Current (I<sub>D): The device supports a continuous drain current of -3.1A, ensuring reliable performance in high current conditions.
  • R<sub>DS(on): With a low on-resistance of just 70mΩ at V<sub>GS = -10V, this MOSFET ensures efficient operation with minimal power loss.
  • Power Dissipation: The ZXMP3F35N8TA has an impressive power dissipation of 1.25W, which helps to maintain stability and performance during prolonged usage.

Applications

The ZXMP3F35N8TA is suitable for a wide range of applications, including:

  • Load switch circuits
  • Power management in portable and battery-powered devices
  • DC-DC converters
  • Motor control systems

Advantages

The ZXMP3F35N8TA stands out in the market with its high efficiency and reliability. Its low threshold voltage ensures that it can be driven by low-voltage control signals, making it suitable for interfacing with microcontrollers and other logic devices. Moreover, the MOSFET's fast switching speeds contribute to reduced switching losses, which is critical for power efficiency in high-frequency applications.

Diodes Incorporated's commitment to quality is evident in the ZXMP3F35N8TA, making it a trustworthy component for engineers and designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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