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ZXMP3F37N8TA

Part No ZXMP3F37N8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6.4A 8SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 31.6nC @ 10V
Max Input Capacitance 1678pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 051997-ZXMP3F37N8TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMP3F37N8TA CAD Model

Description

Introducing the ZXMP3F37N8TA - A High-Performance P-Channel MOSFET from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the ZXMP3F37N8TA, a state-of-the-art P-Channel enhancement mode MOSFET designed for power management applications. This MOSFET is an ideal choice for engineers looking to improve efficiency and performance in their electronic designs.

Key Features

  • Low On-Resistance: The ZXMP3F37N8TA boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced power loss and improved energy efficiency in operation. This feature is particularly beneficial in applications where conserving power is of utmost importance.
  • High Power Dissipation: With an impressive power dissipation capability, this MOSFET can handle higher currents and dissipate more heat than many of its counterparts, making it suitable for more demanding power applications.
  • Advanced Packaging: Housed in a compact SOT223 package, the ZXMP3F37N8TA minimizes board space without sacrificing performance. This packaging also provides excellent thermal performance, further enhancing its power handling capabilities.
  • Gate Protection: The device includes integrated gate protection to safeguard against electrostatic discharge (ESD) events, ensuring reliability and a longer operational lifespan.

Applications

The ZXMP3F37N8TA is versatile and can be used in a variety of applications, including:

  • Power management circuits
  • Load switches
  • Battery management systems
  • DC/DC converters
  • Motor control circuits

Technical Specifications

The MOSFET operates with a -30V drain-source voltage and a -4.1A continuous drain current, making it robust for various electronic applications. The threshold voltage is specified at a standard level, ensuring consistent performance across different devices.

Quality and Reliability

Diodes Incorporated is committed to delivering products with the highest standards of quality and reliability. The ZXMP3F37N8TA is produced with rigorous testing and quality control measures in place, ensuring that each component meets the stringent requirements of the electronics industry.

In conclusion, the ZXMP3F37N8TA P-Channel MOSFET from Diodes Incorporated is an exceptional component for designers looking to enhance the efficiency and reliability of their power management systems. Its low on-resistance, high power dissipation, and robust packaging make it an excellent choice for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3441 $58.4970
410+ $0.2824 $115.7840
635+ $0.2735 $173.6725
875+ $0.2647 $231.6125
1,130+ $0.2559 $289.1670
1,515+ $0.2294 $347.5410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,495 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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