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ZXMP6A13FQTA

Part No ZXMP6A13FQTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 0.9A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 2.9nC @ 4.5V
Max Input Capacitance 219pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 400 mOhm @ 900mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 044177-ZXMP6A13FQTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMP6A13FQTA CAD Model

Description

Product Overview: ZXMP6A13FQTA - P-Channel Enhancement Mode MOSFET

The ZXMP6A13FQTA from Diodes Incorporated is a high-performance, P-channel enhancement mode field-effect transistor (MOSFET) designed for power management applications. This MOSFET utilizes the latest advancements in semiconductor technology to provide efficient power control and switching operations.

Key Features

  • Low On-Resistance: The device offers exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Power Dissipation: With a power dissipation of 2.3W, this MOSFET can handle significant power, making it suitable for robust applications.
  • Voltage Rating: The ZXMP6A13FQTA is rated for a drain-source voltage (V<sub>DSS) of -60V, providing a wide operating range for various circuit designs.
  • Continuous Drain Current: It supports a continuous drain current (I<sub>D) of -4.5A, ensuring reliable performance under high-load conditions.
  • Thermal Management: The device is encapsulated in a PowerDI®5 package, which offers excellent thermal performance and a compact footprint for space-constrained applications.
  • Gate Threshold Voltage: A low gate threshold voltage (V<sub>GS(th)) allows for easy drive and control of the MOSFET at lower voltages.

Applications

The ZXMP6A13FQTA is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Load switches
  • Battery management systems
  • Motor control circuits

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the ZXMP6A13FQTA is no exception. It is manufactured to meet high standards, ensuring reliability and performance consistency. The device is RoHS compliant, adhering to environmental standards and regulations.

Conclusion

With its low on-resistance, high power dissipation, and robust voltage and current ratings, the ZXMP6A13FQTA P-Channel MOSFET from Diodes Incorporated stands out as an excellent choice for designers looking to improve efficiency and thermal performance in their power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3804 $51.3540
325+ $0.3121 $101.4325
500+ $0.3023 $151.1500
685+ $0.2926 $200.4310
885+ $0.2828 $250.2780
1,185+ $0.2536 $300.5160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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