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ZXTN4240F-7

Part No ZXTN4240F-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description SS MID-PERF TRANSISTOR SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features Bipolar (BJT) Transistor NPN 40 V 2 A 100MHz 730 mW Surface Mount SOT-23-3
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
Family Name ZXTN4240
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number ZXTN4240F-7DIDKR, ZXTN4240F-7DICT, ZXTN4240F-7DITR
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 904409-ZXTN4240F-7
Ultra Librarian 3D Model Ultra Librarian ZXTN4240F-7 CAD Model

Description

Introducing the ZXTN4240F-7 Bipolar Transistor from Diodes Incorporated

The ZXTN4240F-7 is a cutting-edge bipolar transistor developed by the renowned manufacturer Diodes Incorporated. This high-performance NPN transistor is designed to meet the needs of modern electronic applications, offering a blend of efficiency, reliability, and compact design.

Constructed using an advanced silicon planar technology, the ZXTN4240F-7 boasts a continuous collector current (I<sub>C) of 2 A, which makes it suitable for medium power applications. Its power dissipation (P<sub>D) is rated at 1.2 W, providing a good balance between power handling and thermal efficiency.

One of the key features of this transistor is its low saturation voltage (V<sub>CE(sat)), which ensures minimal power loss during operation, enhancing overall system efficiency. This characteristic is particularly beneficial in low voltage switching applications, where energy conservation is crucial.

The ZXTN4240F-7 operates at a maximum collector-emitter voltage (V<sub>CEO) of 40 V, which allows for a wide range of operation in various circuit designs. Additionally, it has a collector-base voltage (V<sub>CBO) of 60 V and an emitter-base voltage (V<sub>EBO) of 5 V, providing a robust performance against voltage spikes and surges commonly encountered in electronic circuits.

Its high gain bandwidth product (f<sub>T) of 195 MHz ensures that the transistor can handle high-frequency signals without significant loss of gain, making it an excellent choice for amplification and switching in RF applications.

The ZXTN4240F-7 comes in a surface-mount SOT23 package, which is widely preferred for its small footprint and compatibility with automated assembly processes. This makes it an ideal component for high-density PCB designs where space is at a premium.

Applications for the ZXTN4240F-7 are diverse and include but are not limited to: DC-DC converters, power management circuits, motor control systems, and LED driving solutions. Its reliability and performance make it a go-to transistor for engineers and designers looking to create efficient and long-lasting electronic products.

With the ZXTN4240F-7, Diodes Incorporated continues its tradition of providing high-quality semiconductor products that push the boundaries of innovation and design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1188 $50.4900
900+ $0.1113 $100.1700
1,395+ $0.1076 $150.1020
2,000+ $0.1000 $200.0000
2,600+ $0.0963 $250.3800
3,245+ $0.0925 $300.1625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 147,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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