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Same model may have multiple batches, images only for reference.
BUJ105AB,118 WeEn Semiconductors
Same model may have multiple batches, images only for reference.

BUJ105AB,118

Part No BUJ105AB,118
Manufacturer WeEn Semiconductors
Catalog RF Transistors (BJT)
Description TRANS NPN 400V 8A D2PAK  /  Bipolar (BJT) Transistor NPN 400 V 8 A 125 W Surface Mount D2PAK
Datasheet
BUJ105AB,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr WeEn Semiconductors
Package Tape & Reel (TR)
Transistor Type NPN
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 4A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA, 5V
Power - Max 125 W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number BUJ105
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 934056850118,BUJ105AB /T3,BUJ105AB /T3-ND,BUJ105AB
Standard Package 800
Win Source Part Number 1141568-BUJ105AB,118
Ultra Librarian 3D Model Ultra Librarian BUJ105AB,118 CAD Model

Description

The BUJ105AB,118 from WeEn Semiconductors is an NPN transistor that is used in various electronic applications.

  • Category: Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
  • Package: Tape & Reel (TR)
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Power Max: 125 W
  • Voltage Collector Emitter Breakdown (Max): 400 V
  • Current Collector (Ic) (Max): 8 A
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A
  • Current Collector Cutoff (Max): 100µA
  • HTSUS Code: 8541.29.0095

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