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Same model may have multiple batches, images only for reference.
SI9435BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI9435BDY-T1-GE3

Part No SI9435BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.1A 8-SOIC
Datasheet
SI9435BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 5.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096351-SI9435BDY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI9435BDY-T1-GE3 CAD Model

Description

The Vishay SI9435BDY-T1-GE3 MOSFET is a P-channel transistor designed for use in discrete semiconductor products.

  • Type: P-channel MOSFET
  • Maximum Power Dissipation: 1.3W (Ta)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.1A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 24nC @ 10V
  • Maximum Rds On: 42 mOhm @ 5.7A, 10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3323 $51.5065
325+ $0.3109 $101.0425
500+ $0.3002 $150.1000
720+ $0.2788 $200.7360
935+ $0.2680 $250.5800
1,170+ $0.2573 $301.0410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,800 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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