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ZXTP2008ZTA

Part No ZXTP2008ZTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 5.5A SOT89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 5.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 175mV @ 500mA, 5.5A
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 1A, 1V
Maximum Power Dissipation 2.1W
Frequency - Transition 110MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 057875-ZXTP2008ZTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXTP2008ZTA CAD Model

Description

Introducing the ZXTP2008ZTA PNP Transistor from Diodes Incorporated

The ZXTP2008ZTA is a high-performance PNP transistor crafted by the renowned semiconductor manufacturer, Diodes Incorporated. This versatile bipolar junction transistor is designed to cater to a wide range of applications, making it an ideal choice for designers and engineers looking for reliability and efficiency.

With its compact SOT-89 package, the ZXTP2008ZTA is perfect for space-constrained applications. Despite its small size, it offers a robust power handling capability with a collector current of up to 2A. This makes it suitable for medium power amplification and switching applications, where space and power efficiency are critical.

Key Features of the ZXTP2008ZTA

  • High Current Capability: The device can handle continuous collector currents up to 2A, allowing for robust performance in demanding circuits.
  • Low Saturation Voltage: The ZXTP2008ZTA boasts a low collector-emitter saturation voltage (VCE(sat)), which minimizes power loss and improves efficiency in saturation-related operations.
  • High Power Dissipation: With a power dissipation of up to 2W, this transistor can manage higher power levels, making it suitable for a variety of power applications.
  • Complementary NPN Type Available: For applications requiring complementary pair configurations, Diodes Incorporated offers an NPN counterpart, providing greater design flexibility.

The ZXTP2008ZTA is also characterized by its high gain bandwidth product, which ensures that the device can operate effectively at higher frequencies. This feature, combined with a fast switching speed, makes the ZXTP2008ZTA an excellent choice for amplification in audio systems, driver circuits, and signal processing applications where rapid response times are essential.

Furthermore, the device is built to withstand the rigors of industrial environments, featuring a wide operating temperature range from -55°C to +150°C. This ensures reliable operation under extreme conditions, making it suitable for automotive, industrial, and consumer electronics applications.

In summary, the ZXTP2008ZTA PNP transistor from Diodes Incorporated is a powerful, versatile component that offers a blend of high current capability, efficiency, and reliability, making it a top choice for engineers looking to enhance their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3259 $50.5145
375+ $0.2675 $100.3125
580+ $0.2591 $150.2780
800+ $0.2507 $200.5600
1,035+ $0.2424 $250.8840
1,385+ $0.2173 $300.9605
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,320 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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