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Same model may have multiple batches, images only for reference.
DI036N20PQ Real Image
Same model may have multiple batches, images only for reference.

DI036N20PQ

Part No DI036N20PQ
Manufacturer DIOTEC Electronics Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 36A 8QFN / N-Channel 200 V 36A (Tc) 125W (Tc) Surface Mount 8-QFN (5x6)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diotec Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4270 pF @ 30 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-QFN (5x6)
Package / Case 8-PowerTDFN
Standard Package 5,000
MSL Level 1 (Unlimited)
HTSUS 8541.21.0000
Win Source Part Number 1338447-DI036N20PQ
Ultra Librarian 3D Model Ultra Librarian DI036N20PQ CAD Model

Description

The Diotec Semiconductor MOSFET Transistor 1338447-DI036N20PQ is a high-performance N-channel transistor that is designed for use in discrete semiconductor products.

  • FET Type: N-Channel
  • Vdss Drain to Source Voltage: 200 V
  • Power Dissipation (Max): 125W (Tc)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-QFN (5x6)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Continuous Drain Current (Id): 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 28A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 30 V

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