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Same model may have multiple batches, images only for reference.
EPC2206 Real Image
Same model may have multiple batches, images only for reference.

EPC2206

Part No EPC2206
Manufacturer EPC
Catalog Transistors - FETs, MOSFETs - RF
Description GANFET N-CH 80V 90A DIE
Datasheet
EPC2206 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr EPC
Series eGaN®
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id 2.5V @ 13mA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1940 pF @ 40 V
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0040
Win Source Part Number 852091-EPC2206
Ultra Librarian 3D Model Ultra Librarian EPC2206 CAD Model

Description

The 852091-EPC2206 is a GaNFET (Gallium Nitride) transistor from the eGaN series. It is from EPC.

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Vdss: 80V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
  • Gate Charge (Qg) @ Vgs: 19nC @ 5V
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Operating Temperature: -40°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6423 $50.9922
34+ $2.9885 $101.6090
52+ $2.8951 $150.5452
72+ $2.8018 $201.7296
93+ $2.7084 $251.8812
124+ $2.4282 $301.0968
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Availability: 3,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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