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Same model may have multiple batches, images only for reference.
FCA47N60_F109 Real Image
Same model may have multiple batches, images only for reference.

FCA47N60_F109

Part No FCA47N60_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 47A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 8000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 417W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 23.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1037861-FCA47N60_F109
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FCA47N60_F109 CAD Model

Description

The Fairchild/ON Semiconductor FCA47N60_F109 is a high-performance N-channel MOSFET transistor designed for use in various electronic devices, including power supplies, DC-DC converters, and other applications that require a high power dissipation of up to 417W (Tc).

  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 70 mOhm @ 23.5A, 10V
  • Compliance: RoHS compliant and lead-free

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20+ $10.4895 $209.7900
25+ $10.1399 $253.4975
34+ $9.0909 $309.0906
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