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Same model may have multiple batches, images only for reference.
FCH060N80-F155 Real Image
Same model may have multiple batches, images only for reference.

FCH060N80-F155

Part No FCH060N80-F155
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 56A TO247  /  N-Channel 800 V 56A (Tc) 500W (Tc) Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Series SuperFET® II
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 4.5V @ 5.8mA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14685 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
HTSUS 0000.00.0000
Other Names 2156-FCH060N80-F155,ONSFSCFCH060N80-F155
Standard Package 1
Win Source Part Number 1030444-FCH060N80-F155
Ultra Librarian 3D Model Ultra Librarian FCH060N80-F155 CAD Model

Description

The FCH060N80-F155 from Fairchild Semiconductor is a N-Channel Super Junction MOSFET transistor, which is designed to operate in discrete semiconductor products such as Transistors - FETs, MOSFETs - Single.

  • Vdss (Maximum Drain to Source Voltage): 800 V
  • Id (Continuous Drain Current): 56A @ 25°C
  • FET Feature: Super Junction
  • Rds On (Maximum): 60mOhm @ Id, Vgs of 29A and 10V
  • Qg (Gate Charge): 350 nC @ 10V
  • Ciss (Input Capacitance): 14685 pF @ 100V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: TO-247-3
  • Mounting Type: Through-hole

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