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Same model may have multiple batches, images only for reference.
FDB38N30U Real Image
Same model may have multiple batches, images only for reference.

FDB38N30U

Part No FDB38N30U
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 300V 38A D2PAK
Datasheet
FDB38N30U Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 73nC @ 10V
Max Input Capacitance 3340pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 313W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037973-FDB38N30U
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB38N30U CAD Model

Description

The Fairchild/ON Semiconductor FDB38N30U electronic component is an N-channel MOSFET item that belongs to the Discrete Semiconductor Products category.

  • Category: Discrete Semiconductor Products
  • Win Source Part Number: 1037973-FDB38N30U
  • Package: D2PAK (TO-263AB)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 38A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 73nC @ 10V
  • Maximum Rds On at Id, Vgs: 120 mOhm @ 19A, 10V
  • Maximum Input Capacitance: 3340pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Supply and Demand Status: sufficient
  • Quantity per Package: 800

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192+ $1.8124 $347.9808
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Availability: 16,500 pieces
MOQ: 22 pcs
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