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Same model may have multiple batches, images only for reference.
FDB8441_F085 Real Image
Same model may have multiple batches, images only for reference.

FDB8441_F085

Part No FDB8441_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 28A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 280nC @ 10V
Max Input Capacitance 15000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037982-FDB8441_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB8441_F085 CAD Model

Description

The Fairchild/ON Semiconductor 1037982-FDB8441_F085 is an N-Channel MOSFET with a power dissipation of 300W (Tc).

  • Power Dissipation (Max): 300W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 28A (Ta), 80A (Tc)
  • Mounting Type: SMD (SMT)
  • Package / Case: D2PAK (TO-263AB)
  • Operating Temperature: -55°C to 175°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 2.5 mOhm @ 80A, 10V
  • Product Type: Discrete Semiconductor Products

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115+ $1.5410 $177.2150
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205+ $1.4416 $295.5280
270+ $1.2924 $348.9480
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