The FDD120AN15 is an N-Channel Power MOSFET from Fairchild Semiconductor (now ON Semiconductor), designed for high-efficiency power switching applications. It features low on-resistance and fast switching speed.

Applications

• Synchronous rectification in power supplies
• DC-DC converters
• Motor control
• Uninterruptible power supplies (UPS)
• Power inverters

Features

• Low on-resistance (RDS(on)) for reduced power losses
• High current capability
• Fast switching speed
• Low gate charge (Qg)
• Avalanche energy rated
• RoHS compliant

Benefits

• Improved energy efficiency
• High system reliability
• Simplified thermal management
• Reduced component count
• Environmentally friendly

Additional Details

The FDD120AN15 has a drain-source voltage (VDS) rating of 150V and a continuous drain current (ID) of 41A. The low RDS(on) value contributes to minimal power dissipation and improved efficiency in power switching applications. The device is typically available in a D-PAK (TO-252) package. This MOSFET is designed for applications where high power density and efficiency are important. Its robust avalanche performance makes it suitable for applications that might experience inductive switching. Its low gate charge allows for reduced gate drive losses. The device’s characteristics make it suitable for hard-switching topologies used in power supplies and motor control circuits.