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Same model may have multiple batches, images only for reference.
FDD3N40TF Real Image
Same model may have multiple batches, images only for reference.

FDD3N40TF

Part No FDD3N40TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 2A DPAK
Datasheet
FDD3N40TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 225pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 3.4 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038065-FDD3N40TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD3N40TF CAD Model

Description

The Fairchild/ON Semiconductor FDD3N40TF is an N-Channel MOSFET transistor with a maximum power dissipation of 30W (Tc).

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 2A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 6nC @ 10V
  • Maximum Input Capacitance: 225pF @ 25V
  • Maximum Rds On @ Id, Vgs: 3.4 Ohm @ 1A, 10V
  • Package: D-Pak
  • Operating Temperature: -55°C to 150°C (TJ)

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