The FDG6302 is a dual P-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor). This device is designed for low voltage, low current switching applications. It integrates two MOSFETs in a single package, saving board space and simplifying circuit design. It is often used for load switching and portable applications.

Applications:

• Load Switching
• Portable Devices
• Battery Management
• Analog Switches
• Power Management Circuits

Features:

• Dual P-Channel MOSFETs
• Low On-Resistance (RDS(on))
• Low Threshold Voltage (VGS(th))
• Fast Switching Speed
• Surface Mount Package

Benefits:

• Reduced Board Space
• Simplified Circuit Design
• Low Voltage Operation
• High Efficiency
• Improved Battery Life in Portable Devices

Specifications:

The FDG6302 features a drain-source voltage (VDS) of -25V and a continuous drain current (ID) of -0.4A. Its on-resistance (RDS(on)) is typically 0.8 Ohms at a gate-source voltage (VGS) of -4.5V. The gate threshold voltage (VGS(th)) is typically between -0.45V and -1.05V. The device is available in a SOT-363 package. The low threshold voltage allows it to be driven directly from low-voltage logic signals. This dual MOSFET provides a compact and efficient solution for space-constrained applications.