The FDG6302P_NL is a P-Channel PowerTrench® MOSFET designed for load switching and power management applications. Manufactured by Fairchild/ON Semiconductor, this device offers a combination of low on-state resistance (Rds(on)) and small package size, making it suitable for portable and space-constrained applications.

Applications

• Load Switching
• Power Management in Portable Devices
• Battery Protection Circuits
• High-Side Switching

Features

• -2.5A, -20V. RDS(ON) = 0.110Ω @ VGS = -4.5V
• -2.0A, -20V. RDS(ON) = 0.150Ω @ VGS = -2.5V
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(ON)
• Small Outline SOT-23 Package
• RoHS Compliant

Benefits

• Reduces conduction losses in switching applications.
• Enables efficient operation at low gate drive voltages.
• Facilitates easy integration into compact electronic designs.
• Suitable for use in battery-powered devices due to its low power consumption.

Technical Specifications

The FDG6302P_NL is a P-Channel enhancement mode MOSFET with a drain-source voltage (Vds) rating of -20V and a continuous drain current (Id) rating of -2.5A. Its on-state resistance (Rds(on)) is typically 0.110Ω at a gate-source voltage (Vgs) of -4.5V and 0.150Ω at a gate-source voltage of -2.5V. The device is packaged in a small outline SOT-23 package, making it suitable for space-constrained applications. The gate threshold voltage is typically between -0.45V and -1V.

This MOSFET is particularly well-suited for load switching in portable devices, where low conduction losses and small size are critical. Its low on-state resistance minimizes power dissipation, while its compact package allows for efficient use of board space. Proper gate drive is essential to achieve optimal performance. It is important to consult the datasheet for detailed specifications and application recommendations. The low gate charge reduces switching losses in high frequency applications.