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Same model may have multiple batches, images only for reference.
TSM3481CX6 RFG
Same model may have multiple batches, images only for reference.

TSM3481CX6 RFG

Part No TSM3481CX6 RFG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, P-CHANNEL, -30V,
Datasheet
TSM3481CX6 RFG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 18.09nC @ 10V
Max Input Capacitance 1047.98pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 48 mOhm @ 5.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 1114738-TSM3481CX6 RFG
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TSM3481CX6 RFG CAD Model

Description

The TSM3481CX6 RFG MOSFET is a P-Channel power transistor manufactured by Taiwan Semiconductor.

  • Power Dissipation: 1.6W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.7A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 48 mOhm @ 5.3A, 10V
  • Case/Package: SOT-26
  • Dimension: SOT-23-6
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Reel - TR

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