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Same model may have multiple batches, images only for reference.
FDM2509NZ Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDM2509NZ

Part No FDM2509NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 8.7A 2X5MLP
Datasheet
FDM2509NZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8.7A
Maximum Rds On at Id,Vgs 18 mOhm @ 8.7A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1200pF @ 10V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-MicroFET (2x5)
Win Source Part Number 204099-FDM2509NZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDM2509NZ CAD Model

Description

The Fairchild/ON Semiconductor FDM2509NZ is a dual N-channel MOSFET designed for high-performance power switching applications.

  • Power Dissipation: 800mW
  • Drain-Source Breakdown Voltage: 20V
  • Supply and Demand: Balanced
  • Package: 6-MicroFET (2x5)
  • Rds On: 18 mOhm @ 8.7A, 4.5V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Gate Charge: 17nC @ 4.5V
  • Suitable for: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4368 $58.9680
325+ $0.3585 $116.5125
500+ $0.3473 $173.6500
690+ $0.3361 $231.9090
890+ $0.3249 $289.1610
1,190+ $0.2913 $346.6470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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