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FDN327N Real Image FDN327N real image4082 FDN327N real image4083 FDN327N real image4084 FDN327N Real Image1 FDN327N Real Image2 FDN327N Real Image3 FDN327N Real Image4
Same model may have multiple batches, images only for reference.
FDN327N Real Image FDN327N real image4082 FDN327N real image4083 FDN327N real image4084 FDN327N Real Image1 FDN327N Real Image2 FDN327N Real Image3 FDN327N Real Image4
FDN327N Real Image FDN327N real image4082 FDN327N real image4083 FDN327N real image4084 FDN327N Real Image1 FDN327N Real Image2 FDN327N Real Image3 FDN327N Real Image4
Same model may have multiple batches, images only for reference.

FDN327N

Part No FDN327N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2A SSOT-3
Datasheet
FDN327N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 6.3nC @ 4.5V
Max Input Capacitance 423pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 016101-FDN327N
Family Name FDN327N
Introduction Date January 18, 2006
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Quantity per package 3k pcs
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Rds On (Max) @ Id, Vgs 70 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 423 pF @ 10 V
Operating Temperature -55°C ~ 155°C (TJ)
Grade -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Ultra Librarian 3D Model Ultra Librarian FDN327N CAD Model

Description

The Fairchild/ON Semiconductor FDN327N is an N-channel MOSFET transistor that comes in SuperSOT-3 packaging.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 6.3nC @ 4.5V
  • Maximum Input Capacitance: 423pF @ 10V
  • Maximum Rds On: 70 mOhm @ 2A, 4.5V
  • Applications: Power management and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1651 $50.3555
650+ $0.1547 $100.5550
1,005+ $0.1495 $150.2475
1,440+ $0.1390 $200.1600
1,870+ $0.1338 $250.2060
2,335+ $0.1286 $300.2810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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