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FDP023N08B Real Image FDP023N08B real image4110
Same model may have multiple batches, images only for reference.
FDP023N08B Real Image FDP023N08B real image4110
FDP023N08B Real Image FDP023N08B real image4110
Same model may have multiple batches, images only for reference.

FDP023N08B

Part No FDP023N08B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.8V @ 250μA
Max Gate Charge 195nC @ 10V
Max Input Capacitance 13765pF @ 37.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 245W (Tc)
Maximum Rds On at Id,Vgs 2.35 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204101-FDP023N08B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDP023N08B CAD Model

Description

The Fairchild/ON Semiconductor FDP023N08B is a MOSFET technology-based N-channel polarity device designed for use in discrete semiconductor products. The device has a balanced supply and demand status.

  • Power Dissipation: 245W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.35 mOhm @ 75A, 10V
  • Mounting: Through-Hole
  • Package: Tube/Rail

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Quantity Unit Price Ext. Price
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44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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