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Same model may have multiple batches, images only for reference.
FDP120AN15A0 Real Image
Same model may have multiple batches, images only for reference.

FDP120AN15A0

Part No FDP120AN15A0
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 14A TO-220AB
Datasheet
FDP120AN15A0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 2.8A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 770pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038305-FDP120AN15A0
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP120AN15A0 CAD Model

Description

The Fairchild/ON Semiconductor FDP120AN15A0 is an N-Channel MOSFET designed for use in Discrete Semiconductor Products.

  • Package: TO-220-3
  • Maximum Power Dissipation: 65W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 2.8A (Ta), 14A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 14.5nC @ 10V
  • Maximum Input Capacitance: 770pF @ 25V
  • Maximum Rds On @ Id,Vgs: 120 mOhm @ 4A, 10V
  • Temperature Range: -55°C to 175°C (TJ)

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